Substitution effect on metal-insulator transition in Cu(Ir1−xMx)2S4 (M = Sn, Hf)

A spinel CuIr₂S₄ exhibits a temperature-induced metal-insulator (M-I) transition at around 226 K. Non-magnetic substitution effect on the M-I transition, T_M-I, in Cu(Ir_1−xM_x)₂S₄ (M = Sn, Hf) has been studied on the focus of the rather low composition region of x. Magnetic property of Cu(Ir_1−xM_x)₂S₄ (M = Sn, Hf) has been examined experimentally. The T_M-I decreases with increasing x and the temperature hysteresis becomes unclear within the experimental errors. The step anomaly in the magnetic susceptibility smears out and the T_M-I becomes ill defined around x = 0.20 in Cu(Ir_1−xSn_x)₂S₄, and x = 0.10 in Cu(Ir_1−xHf_x)₂S₄, respectively. These substitutions play an important role in decoupling the spin-dimerization of Ir⁴⁺-Ir⁴⁺ in CuIr₂S₄, and lead the destruction of the metal-insulator transition.     

Mechanism of simultaneous tripping of ground directional relays in a 6.6‐kV distribution system

In Kyushu Electric Power's 6.6‐kV distribution system, after a single‐phase ground fault occurred in the circuit of a distribution line, we experienced a phenomenon in which the analogue ground directional relays of the other circuits linked to the same bank were simultaneously tripped. In this paper, focus is placed on the mechanism and possibility of simultaneous tripping of ground directional relays. This mechanism was examined in an experiment carried out using an analogue simulator. The results of the test revealed that such simultaneous tripping was attributable to the neutral instability phenomenon of grounding potential transformers installed in an isolated neutral system. © 2010 Wiley Periodicals, Inc. Electr Eng Jpn, 171(2): 23–30, 2010; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20919     

Ferroelectric properties of ultrathin films of Nylon 11

Ferroelectric properties of ultrathin films of Nylon 11 were investigated. The thickness was in the range of 25 to 55 nm. Ferroelectric response was largely affected by thermal annealing and following cooling conditions. Thermal annealing at higher temperature followed by quenching in liquid nitrogen gave larger remanent polarization and smoother surface, whereas cooling down in an ambient atmosphere caused smaller remanent polarization and rough surface. Surface roughness strongly affected the polarization reversal and remanent polarization. Hydrogen bonding in crystal was also significantly related to the polarization reversal and thus remanent polarization.     

Experimental study on latent heat storage characteristics of W/O emulsion -Supercooling rate of dispersed water drops by direct contact heat exchange-

Recently, much attention has been paid to investigate the latent heat storage system. Using of ice heat storage system brings an equalization of electric power demand, because it will solved the electric -power-demand-concentration on day-time of summer by the air conditioning. The flowable latent heat storage material, Oil/Water type emulsion, microencapsulated latent heat material-water mixture or ice slurry, etc., is enable to transport the latent heat in a pipe. The flowable latent heat storage material can realize the pipe size reduction and system efficiency improvement. Supercooling phenomenon of the dispersed latent heat storage material in continuous phase brings the obstruction of latent heat storage. The latent heat storage rates of dispersed water drops in W/O (Water/Oil) emulsion are investigated experimentally in this study. The water drops in emulsion has the diameter within 3 ～ 25μm, the averaged water drop diameter is 7.3μm and the standard deviation is 2.9μm. The direct contact heat exchange method is chosen as the phase change rate evaluation of water drops in W/O emulsion. The supercooled temperature and the cooling rate are set as parameters of this study. The evaluation is performed by comparison between the results of this study and the past research. The obtained experimental result is shown that the 35K or more degree from melting point brings 100% latent heat storage rate of W/O emulsion. It was clarified that the supercooling rate of dispersed water particles in emulsion shows the larger value than that of the bulk water.     

Cloning and heterologous expression of a beta-fructofuranosidase gene from Arthrobacter globiformis IFO 3062, and site-directed mutagenesis of the essential aspartic acid and glutamic acid of the active site

We have cloned the gene encoding a beta-fructofuranosidase from Arthrobacter globiformis IFO 3062, and subsequently, the gene was heterologously expressed in Escherichia coli. This beta-fructofuranosidase gene encodes a protein of 548 amino acid residues with a calculated molecular mass of 60,519 Da. We have examined the roles of three residues of A. globiformis IFO 3062 beta-fructofuranosidase by site-directed mutagenesis, and found that aspartic acid 130 and glutamic acid 392, which are two of the apparent catalytic residues, are essential for hydrolase activity. This study provides the first experimental evidence showing that these two amino acid residues of beta-fructofuranosidase play a critical role in hydrolyzing sucrose.     

Differential formation of allophane and imogolite: experimental and molecular orbital study

Allophane and imogolite are naturally occurring aluminum silicate soil constituents with nano-ball and nano-tube morphology. Wall of the both materials is composed of Al(OH)₃ sheet with orthosilicic acid attached to it. Synthesis of allophane and imogolite can be controlled by addition of alkali and alkaline-earth metal ions. The main reaction product without or with small amounts addition of the metal ions is imogolite, while allophane forms when the metal ions were much added. The effect of metal ions on facilitating allophane formation and inhibition of imogolite formation were greater in the following order of Na, K < Ca, Mg. These metal ions affect the degree of dissociation of Si–OH group of orthosilicic acid, which may causes differential formation of allophane and imogolite. Structure optimization of the proto-imogolite model, precursor of allophane and imogolite, showed that when the Si–OH was undissociated, the shape of proto-imogolite model was transformed to asymmetrical in molecular configuration. This caused curling of the proto-imogolite model, which lead to formation of imogolite tube. On the other hand, when the Si–OH was dissociated, the shape of the proto-imogolite model was transformed to symmetrical configuration. This model curved to make a hollow sphere with placing the orthosilicic acid inside the sphere (allophane). Both of the experimental and molecular orbital calculation results proved that the dissociation of the Si–OH has an important role during the differential formation of allophane and imogolite.     

Fabrication of silicon nitride nanoceramics—Powder preparation and sintering: A review

Fine-grained silicon nitride ceramics were investigated mainly for their high-strain-rate plasticity. The preparation and densification of fine silicon nitride powder were reviewed. Commercial sub-micrometer powder was used as raw powder in the “as-received” state and then used after being ground and undergoing classification operation. Chemical vapor deposition and plasma processes were used for fabricating nanopowder because a further reduction in grain size caused by grinding had limitations. More recently, nanopowder has also been obtained by high-energy milling. This process in principle is the same as conventional planetary milling. For densification, primarily hot pressing was performed, although a similar process known as spark plasma sintering (SPS) has also recently been used. One of the advantages of SPS is its high heating rate. The high heating rate is advantageous because it reduces sintering time, achieving densification without grain growth. We prepared silicon nitride nanopowder by high-energy milling and then obtained nanoceramics by densifying the nanopowder by SPS.     

Photorefractive device using self-assembled monolayer coated indium-tin-oxide electrodes

Photorefractive (PR) performances of methyl-substituted poly(triarylamine) (PTAA)-based PR device were demonstrated using chemically modified electrodes (CMEs) of self-assembled monolayer (SAM) coated indium-tin-oxide (ITO) electrodes. The SAM-ITO electrodes successfully suppressed dark current which blocks the formation of space-charge field and also causes the dielectric breakdown. The PR device consisted of composite of PTAA, 4-azacycloheptylbenzylidenemalononitrile (7-DCST), N-ethylcarbazole (ECz), and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) sandwiched between the SAM-ITO electrodes. The PR devices showed the PR performances: optical gain Γ, refractive index Δn, diffraction efficiency η, response time τ, sensitivity S, phase shift Φ, trap-limited field E_q, number density of traps N_T, and space-charge field E_SC. The remarkable response time of 11.3 ms was achieved at the low electric field of 20 V μm⁻¹, which was comparable to the response time of high-definition television (HDTV) quality of 16 ms. Our approach will widen the usage of higher mobility materials to photorefractive field and give us more favorable materials to achieve the best performance of photorefractivity in the future.     

Preparation of diamondlike carbon films using nanopulse generator employing SI thyristor

Diamondlike carbon (DLC) films show high hardness, high electric resistivity, and the self‐lubricant characteristic, and many applications and synthesis methods have been reported. Pulse plasma chemical vapor deposition (CVD) is one of the synthesis methods suitable for DLC films on complicated form work, such as molding and extruding die. Ordinary, microsecond‐order pulse is used in this method. This paper describes the development of the synthesis method using nanosecond‐order pulse plasma CVD for DLC films. To realize this process, a static induction (SI) thyristor with an inductive energy storage (IES) circuit was used. Compared with microsecond, nanosecond‐order pulse plasma CVD method shows the characteristics of high electron temperature and exponential relationship between pulse frequency and growth rate. The characteristics of the thus‐obtained DLC films show two broad peaks of the disordered band at 1360 cm^?1 and the graphitic band at 1580 cm^?1 by Raman spectroscopy and hardness of 16.0 GPa and elastic modulus of 170 GPa. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 159(4): 1–7, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20341